1 h igh diode semiconductor to-2 52-2l MBRD20150CT features i o 20a vrrm high surge current capability applications rectifier marking MBRD20150CT 150v to-2 52-2l plastic-encapsulate diodes schottky rectifier item symbol unit test conditions repetitive peak reverse voltage v rrm v average rectified output current i o a 60hz half-sine wave, resistance load, tc(fig.1) 20.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave ,1 cycle , ta =25 180 junction temperature t j -55~+150 storage temperature t stg -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified item symbol unit test condition peak forward voltage v f v i f =10.0a peak reverse current i rrm1 ma v rm =v rrm t a =25 0.05 i rrm2 t a =125 thermal resistance(typical) r j-c /w between junction and case 2.0 1.5 150 0.86 MBRD20150CT MBRD20150CT typical total capacitance c tot pf vr=4v,f=1mhz 100 hd to 103 2 1 3
h igh diode semiconductor typical characteristics fig.4 typical reverse characteristics voltage(%) ir(ma) tj=25 tj=75 0 20 40 60 80 100 0.001 0.01 0.1 1.0 10 tj=125 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.5 vf(v) if(a) fig3:instantaneous forward voltage 1.0 10 20 40 5.0 ta=25 0.8 0.9 1.0 0.1 0 60 1.1 1.2 50 fig.1: forward current derating curve io(a) tc( ) 0 70 90 110 130 150 24 4 8 12 16 20 ifsm(a) number of cycles fig.2: maximum non-repetitive forward urge current 8.3ms single half sine wave jedec method 1 10 100 0 210 30 60 90 120 150 180
3 h igh diode semiconductor to-252-2l to-252-2l
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